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PD - 90674C
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM7250 100K Rads (Si) IRHM3250 300K Rads (Si) IRHM4250 IRHM8250 600K Rads (Si) RDS(on) 0.10 0.10 0.10 ID 26A 26A 26A 26A
IRHM7250 JANSR2N7269 200V, N-CHANNEL
REF: MIL-PRF-19500/603 (R) TM RAD Hard HEXFET TECHNOLOGY
QPL Part Number JANSR2N7269 JANSF2N7269 JANSG2N7269 JANSH2N7269
1000K Rads (Si) 0.10 HEXFET(R)
TO-254AA
International Rectifier's RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 26 16 104 150 1.2 20 500 26 15 5.0 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s) 9.3 (Typical)
g
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IRHM7250, JANSR2N7269
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
200 -- -- -- 2.0 8.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.27 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.10 0.11 4.0 -- 25 250 100 -100 170 30 60 33 140 140 140 -- V V/C V S( ) A
Test Conditions
VGS =0 V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 16A VGS = 12V, ID = 26A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 16A VDS= 160V,VGS=0V VDS = 160V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 26A VDS = 100V VDD = 100V, ID = 26A, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
4700 850 210
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 26 104 1.4 820 12
Test Conditions
A
V nS C Tj = 25C, IS = 26A, VGS = 0V Tj = 25C, IF = 26A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.83 0.21 -- -- 48
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHM7250, JANSR2N7269
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254AA) Diode Forward Voltage
100K Rads(Si)1
600 to 1000K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA V GS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID =16A VGS = 12V, ID =16A VGS = 0V, IS = 26A
Min 200 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 25 0.094 0.10 1.4
Min 200 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 50 0.149 0.155 1.4
1. Part number IRHM7250 (JANSR2N7269) 2. Part numbers IRHM3250 (JANSF2N7269), IRHM4250 (JANSG2N7269) and IRHM8250 (JANSH2N7269)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 Range VDS(V) (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 190 180 170 125 -- 39 100 100 100 50 --
200 150 100 50 0 0 -5 -10 VGS -15 -20 Cu Br VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHM7250, JANSR2N7269
Post-Irradiation Pre-Irradiation
Fig 1. Typical Response of Gate Threshhold Voltage Vs. Total Dose Exposure
Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure
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Post-Irradiation Pre-Irradiation
IRHM7250, JANSR2N7269
Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level
Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation
Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation
Fig 9. High Dose Rate (Gamma Dot) Test Circuit
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IRHM7250, JANSR2N7269
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
RadiationPost-Irradiation Characteristics Pre-Irradiation
Fig 10. Typical Output Characteristics Pre-Irradiation
Fig 11. Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Fig 12. Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Fig 13. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si)
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Radiation Characteristics Pre-Irradiation
Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc
IRHM7250, JANSR2N7269
Fig 14. Typical Output Characteristics Pre-Irradiation
Fig 15. Typical Output Characteristics Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics Post-Irradiation 300K Rads (Si)
Fig 17. Typical Output Characteristics Post-Irradiation 1 Mega Rads(Si)
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IRHM7250, JANSR2N7269
Pre-Irradiation
Fig 18. Typical Output Characteristics
Fig 19. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
Fig 21. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHM7250, JANSR2N7269
Fig 22. Typical CapacitanceVs. Drain-to-Source Voltage
Fig 23. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 24. Typical Source-Drain Diode Forward Voltage
Fig 25. Maximum Safe Operating Area
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IRHM7250, JANSR2N7269
Pre-Irradiation
VDS VGS RG
RD
D.U.T.
+
-VDD
12V
Pulse Width 1 s Duty Factor 0.1 %
Fig 26a. Switching Time Test Circuit
VDS 90%
10% VGS
Fig 26. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 26b. Switching Time Waveforms
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7250, JANSR2N7269
1 5V
VD S
L
D R IV E R
RG
D .U .T
IA S
+ - VD D
A
12V 20V
tp
0 .0 1
Fig 28a. Unclamped Inductive Test Circuit
V (B R )D S S tp
Fig 28c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 28b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 29a. Basic Gate Charge Waveform
Fig 29b. Gate Charge Test Circuit
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IRHM7250, JANSR2N7269
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 1.5mH Peak IL = 26A, VGS = 12V ISD 26A, di/dt 190A/s, VDD 200V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-254AA
.12 ( .005 ) 3.78 ( .149 ) 3.53 ( .139 ) -A 13.84 ( .545 ) 13.59 ( .535 ) 6.60 ( .260 ) 6.32 ( .249 ) -B 1.27 ( .050 ) 1.02 ( .040 )
17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 )
20.32 ( .800 ) 20.07 ( .790 )
13.84 ( .545 ) 13.59 ( .535 )
1
2
3 -C-
LE G E N D 1 - CO LLE 2 - E M ITT 3 - G A TE
3X 3.81 ( .150 ) 2X
1.14 ( .045 ) 0.89 ( .035 ) .50 ( .020 ) .25 ( .010 ) M C AM B MC
3.81 ( .150 )
IRHM7250D IRHM7250U
LEGEND 1- DRAIN 2- SOURCE 3- GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00
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